Recombination Parameter of Gallium Indium Arsenide (GaInAs)
Electrical properties
Basic ParametersMobility and Hall Effect
Twodimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters
Recombination Parameter
Nonradiative (curves 1 and 2) and radiative (curves 3 and 4) lifetimes for Ga_{0.47}In_{0.53}As versus majority carrier density. T=300 K. Solid curves are dependences for ntype, dushed curves are dependeces for ptype. Henry et al. (1984) 

Coefficient of the bimolecular recombination as a function of temperature for Ga_{0.47}In_{0.53}As. Zielinski et al. (1986) 

Electron diffusion length in pGa_{0.47}In_{0.53}As as a function of hole concentration. Ambree et al. (1992) 
Pure ntype: 

Ref  
The longest lifetime of holes  τ_{p} ≤ 10 s  Ga_{0.47}In_{0.53}As; n_{o}~2·10^{15} cm^{3}  
Diffusion length L_{p}=(D_{p}·L_{p})^{1/2 }  L_{p}≤100 µm  Ga_{0.47}In_{0.53}As; n_{o}~2·10^{15} cm^{3}  
Surface recombination velocity  <10^{6} cm/s  
Radiative recombination coefficient  0.96·10^{10} cm^{3}/s  Ga_{0.47}In_{0.53} As; 300K  
Auger coefficient  7·10^{29} cm^{6}/s  Ga_{0.47}In_{0.53} As; 300K 